STPS160H100TV ? july 1999 - ed: 2a high voltage power schottky rectifier i f(av) 2 x 80 a v rrm 100 v tj (max) 150 c v f (max) 0.68 v main product characteristics negligible switching losses high junction temperature capability low leakage current good trade off between leakage current and forward voltage drop avalanche rated low induction package insulated package: insulating voltage = 2500 v (rms) capacitance = 45 pf features and benefits high voltage dual schottky rectifier designed for high frequency telecom and computer switched mode power supplies and other power converters. packaged in isotop, this device is intended for use in medium voltage operation, and particu- larly, in high frequency circuitries where low switching losses and low noise are required. description isotop tm k2 k1 a2 a1 symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f(rms) rms forward current 180 a i f(av) average forward current tc = 110c d = 0.5 per diode per device 80 160 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 1000 a i rrm repetitive peak reverse current tp = 2 m s square f = 1khz 2 a i rsm non repetitive peak reverse current tp = 100 m s square 10 a t stg storage temperature range - 55 to + 150 c tj maximum operating junction temperature * 150 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) * : dptot dtj < 1 rth ( j - a ) thermal runaway condition for a diode on its own heatsink 1/4
symbol parameter value unit r th (j-c) junction to case per leg 0.9 c/w total 0.5 c/w r th (c) coupling 0.14 c/w thermal resistances symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25 cv r = v rrm 40 m a tj = 125 c1350ma v f ** forward voltage drop tj = 25 ci f = 60 a 0.75 v tj = 125 ci f = 60 a 0.59 0.63 tj = 25 ci f = 80 a 0.80 tj = 125 ci f = 80 a 0.63 0.68 tj = 25 ci f = 120 a 0.87 tj = 125 ci f = 120 a 0.69 0.74 tj = 25 ci f = 160 a 0.92 tj = 125 ci f = 160 a 0.75 0.80 static electrical characteristics (per diode) pulse test : * tp = 5 ms, d < 2% ** tp = 380 m s, d < 2% to evaluate the conduction losses use the following equation : p = 0.56 x i f(av) + 0.0015 x i f 2 (rms) 0 20 40 60 80 100 0 10 20 30 40 50 60 70 80 if(av) (a) pf(av)(w) d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 t d =tp/t tp fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 20 40 60 80 100 tamb(c) if(av)(a) rth(j-a)=2c/w rth(j-a)=rth(j-c) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d =0.5, per diode). when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) STPS160H100TV 2/4
1e-3 1e-2 1e-1 1e+0 0 100 200 300 400 500 600 t(s) im(a) tc=50c tc=90c i m t d =0.5 fig. 3: non repetitive surge peak forward current ver- sus overload duration (maximum values, per diode). 0 102030405060708090100 1e-3 1e-2 1e-1 1e+0 1e+1 5e+1 vr(v) ir(ma) tj=125c tj=25c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 500 vfm(v) ifm(a) tj=125c tj=25c fig. 7: forward voltage drop versus forward cur- rent (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 5e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) single pulse d = 0.1 d = 0.2 d = 0.5 t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration (per diode). 1 2 5 10 20 50 100 0.1 1.0 10.0 vr(v) c(nf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse volt- age applied (typical values, per diode) . STPS160H100TV 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com package mechanical data isotop tm ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 ordering type marking package weight base qty delivery mode STPS160H100TV STPS160H100TV isotop 27g without screws 10 tube epoxy meets ul94,v0 cooling method: c recommended torque value: 1.3 n.m. maximum torque value: 1.5 n.m. STPS160H100TV 4/4
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